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Efficiency droop in nitride-based light-emitting diodes
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Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
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A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
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被撤回的出版物: Non-blinking semiconductor nanocrystals (Retracted article. See vol. 527, 2015)
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Green light emitting diodes on a-plane GaN bulk substrates
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On the importance of radiative and Auger losses in GaN-based quantum wells
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APPLIED PHYSICS LETTERS (2008)
Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes
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IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
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Origin of efficiency droop in GaN-based light-emitting diodes
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APPLIED PHYSICS LETTERS (2007)
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)
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