期刊
APPLIED PHYSICS LETTERS
卷 102, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4807485
关键词
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资金
- Ministry of Education [R31-2008-000-10071-0]
- Ministry of Knowledge Economy, KAIST EEWS Initiative [10041878]
- KAIST Institute for the NanoCentury
We propose a facile analysis method for determining internal quantum efficiency (IQE) and relative carrier recombination ratios in light emitting diodes (LEDs). Using this method, IQE and different contributions of radiative and nonradiative recombination processes at arbitrary excitation power can be unambiguously determined without any knowledge of A, B, and C coefficients of the rate equation. We applied our analysis method to two LED samples grown on different substrates with distinct material quality and found good agreement with experimental results such as omega-rocking curve obtained by high resolution x-ray diffraction and decay lifetime measured by time-resolved photoluminescence. (C) 2013 AIP Publishing LLC.
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