相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。GeSn p-i-n detectors integrated on Si with up to 4% Sn
M. Oehme et al.
APPLIED PHYSICS LETTERS (2012)
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
A. Gassenq et al.
OPTICS EXPRESS (2012)
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
J. Werner et al.
APPLIED PHYSICS LETTERS (2011)
Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy
Robert Chen et al.
APPLIED PHYSICS LETTERS (2011)
High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge-Sn Devices Integrated on Silicon
Radek Roucka et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2011)
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
Shaojian Su et al.
JOURNAL OF CRYSTAL GROWTH (2011)
GeSn p-i-n photodetector for all telecommunication bands detection
Shaojian Su et al.
OPTICS EXPRESS (2011)
Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon
J. Mathews et al.
APPLIED PHYSICS LETTERS (2010)
Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
Jay Mathews et al.
APPLIED PHYSICS LETTERS (2009)
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Yimin Kang et al.
NATURE PHOTONICS (2009)
Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys
V. R. D'Costa et al.
PHYSICAL REVIEW LETTERS (2009)
High performance, waveguide integrated Ge photodetectors
Donghwan Ahn et al.
OPTICS EXPRESS (2007)
The establishment of the NPL infrared relative spectral responsivity scale using cavity pyroelectric detectors
Evangelos Theocharous
METROLOGIA (2006)
Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications -: art. no. 011110
JF Liu et al.
APPLIED PHYSICS LETTERS (2005)
Sn-mediated Ge/Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness
KA Bratland et al.
JOURNAL OF APPLIED PHYSICS (2005)
Correlation between leakage current density and threading dislocation density in SiGe p-i-n diodes grown on relaxed graded buffer layers
LM Giovane et al.
APPLIED PHYSICS LETTERS (2001)
分享论文
