Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

The transfer printing of 2 mu m-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150nm (+/- 14nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 x 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 mu W (355 mW/cm(2)) when operated at a current density of 20A/cm(2). (C) 2013 AIP Publishing LLC.