期刊
APPLIED PHYSICS LETTERS
卷 102, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4799498
关键词
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资金
- NRI MIND center
- Semiconductor Research Corporation (SRC)
- SRC/DARPA LEAST center
- NSF
- AFOSR
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower energy than their conventional counterparts. The recent emergence of two-dimensional (2D) semiconducting crystals provides an attractive material platform for realizing such devices. In this work, we derive an analytical expression for understanding tunneling current flow in single-layer 2D crystal semiconductors in the k-space. We apply the results to a range of 2D crystal semiconductors, and compare it with tunneling currents in three-dimensional semiconductors. We also discuss the implications for tunneling devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799498]
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