期刊
APPLIED PHYSICS LETTERS
卷 103, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4817797
关键词
-
资金
- German Research Foundation (DFG)
We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 mu W corresponding to an optical power-to-THz power conversion efficiency of up to 2 x 10(-3). (C) 2013 AIP Publishing LLC.
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