4.6 Article

Observation of suppressed terahertz absorption in photoexcited graphene

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APPLIED PHYSICS LETTERS
卷 102, 期 11, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4795858

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  1. Department of Energy Office of Basic Energy Sciences [DE-SC0006423]
  2. NSF GRFP
  3. Air Force Office of Scientific Research
  4. Office of Naval Research GATE MURI
  5. National Science Foundation [DMR-0819762, ECS-0335765]
  6. Harvards Center for Nanoscale Systems (CNS)
  7. U.S. Department of Energy (DOE) [DE-SC0006423] Funding Source: U.S. Department of Energy (DOE)

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When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectroscopy in conjunction with optical pump excitation, we observe a reduced absorption of THz radiation in photoexcited graphene. The measured spectral shape of the differential optical conductivity exhibits non-Drude behavior. We discuss several possible mechanisms that contribute to the observed low-frequency non-equilibrium optical response of graphene. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795858]

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