Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

The mechanism of native defect doping in amorphous In-Zn-O (a-IZO) has not previously been established but is likely associated with native oxygen defect doping. We have used high pressure oxidation and defect equilibrium analysis to show a -1/6 power dependence of carrier density on oxygen fugacity in a-IZO. This dependency is predicted for oxygen vacancy-like donor defects. Extrapolation of equilibrium constants established at high pressures to atmospheric pressure reveals that the equilibrium carrier density in a-IZO at 200 degrees C is higher (>10(20)/cm(3)) than typical as-deposited channel carrier densities (< 10(17)/cm(3)). This is consistent with observed increases in channel carrier density and negative threshold voltage shift in annealed a-IZO thin film transistor devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790187]