期刊
APPLIED PHYSICS LETTERS
卷 103, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4833275
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资金
- National Natural Science Foundation of China (NSFC) [61106010, 21101051]
- Fundamental Research Funds for the Central Universities [2013HGXJ0195, 2013HGCH0012]
Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm(2)V(-1)s(-1) and a hole concentration of 1.67 x 10(17) cm(-3), respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application. (C) 2013 AIP Publishing LLC.
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