期刊
APPLIED PHYSICS LETTERS
卷 103, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4819733
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资金
- Y-12 National Security Complex Plant Directed Research and Development Program [6300011269]
- DOE [1089091]
- Army Grant [W911NF-11-0196]
- NSF [CA-0420516]
- Division Of Astronomical Sciences
- Direct For Mathematical & Physical Scien [0849736] Funding Source: National Science Foundation
- EPSCoR
- Office Of The Director [1004083] Funding Source: National Science Foundation
(LiInSe2)-Li-6 is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of defect levels in (LiInSe2)-Li-6 by photo-induced current transient spectroscopy (PICTS) and photoluminescence is reported. PICTS measurements revealed electron-related defects located at 0.22, 0.36, and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. Free exciton and donor-acceptor pairs (DAP) emissions were observed. The PICTS defect level values are consistent with those extracted from DAP transitions. (C) 2013 AIP Publishing LLC.
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