期刊
APPLIED PHYSICS LETTERS
卷 103, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4818585
关键词
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资金
- Israel Science Foundation [695/10]
- Russell Berrie Nanotechnology Institute at the Technion - Israel Institute of Technology
- Azrieli Foundation
We report a theoretical and experimental investigation of the switching characteristics in patterned-source vertical field effect transistors. Experimentally we show that the layered structure gives rise to capacitances coupling of the potential between the drain and source electrodes. By removing the extrinsic gate-source capacitance we are able to demonstrate unprecedented sub-2 mu s switching and current levels of 3 A/cm(2). Theoretically, using a 2D drift-diffusion model, we show that the intrinsic response depends on two processes: the formation of the virtual electrode and the injection through it to form the vertical channel. The importance of the source structure parameter to achieve ultimate speed is discussed. (C) 2013 AIP Publishing LLC.
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