期刊
APPLIED PHYSICS LETTERS
卷 102, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4791567
关键词
-
资金
- KAKENHI [23360297]
- Ministry of Education, Culture, Sports, Science, and Technology, Japan [10J05810]
- Grants-in-Aid for Scientific Research [10J05810, 23360297] Funding Source: KAKEN
Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu2Te3 film based on the reflectance of amorphous and crystalline states. The GeCu2Te3 film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge2Sb2Te5 film. The crystallization starting time of the as-deposited GeCu2Te3 film was as fast as that of the as-deposited Ge2Sb2Te5 film. Furthermore, the GeCu2Te3 crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge2Sb2Te5. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791567]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据