期刊
APPLIED PHYSICS LETTERS
卷 103, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4824205
关键词
-
资金
- NSF [CMMI-1232883]
- Open-Lab program of the Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences [12ZD05]
- Directorate For Engineering [1232883] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn [1232883] Funding Source: National Science Foundation
We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (similar to 10(4) for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据