期刊
APPLIED PHYSICS LETTERS
卷 102, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4804546
关键词
-
资金
- Army Research Lab (ARL) Director's Strategic Initiative (DSI) program
- ARO MURI
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm(2)/V s at 300 K without a high-k dielectric overcoat and increased to 16.1 cm(2)/V s with a high-k dielectric overcoat. In addition the devices show on/off ratios ranging from 10(5) to 10(9). (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据