期刊
QUANTUM INFORMATION PROCESSING
卷 3, 期 1-5, 页码 133-146出版社
SPRINGER
DOI: 10.1007/s11128-004-2224-z
关键词
Quantum computation; quantum dot; silicon; silicon-germanium; spin; quantum well
资金
- ARDA
- ARO
- NSF
The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a strategy for fabricating single electron spin qubits in gated quantum dots in Si/SiGe heterostructures. We discuss the pros and cons of using silicon, present recent advances, and outline challenges.
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