期刊
APPLIED PHYSICS LETTERS
卷 102, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4802797
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资金
- Research Grant Council of Hong Kong Special Administrative Region [706110, 706111, 605011]
We report the growth of single-domain epitaxial Bi2Se3 films on InP(111)A substrate by molecular-beam epitaxy. Nucleation of Bi2Se3 proceeds at steps, so the lattices of the substrate play the guiding role for a unidirectional crystalline film in the step-flow growth mode. There exists a strong chemical interaction between atoms at the heterointerface, so the growth does not follow the van der Waals epitaxy process. A mounded morphology of thick Bi2Se3 epilayers suggests a growth kinetics dictated by the Ehrlich-Schwoebel barrier. The Schubnikov de Haas oscillations observed in magnetoresistance measurements are attributed to Landau quantization of the bulk states of electrons. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802797]
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