4.6 Article

Self healing of defected graphene

期刊

APPLIED PHYSICS LETTERS
卷 102, 期 10, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4795292

关键词

-

资金

  1. NSFC [11074007]
  2. MOST [2012CB933404, 2009CB623703]
  3. International Science & Technology Cooperation Program of China Sino Swiss Science and Technology Cooperation Program (SSSTC) [2010DFA01810]

向作者/读者索取更多资源

For electronics applications, defects in graphene are usually undesirable because of their ability to scatter charge carriers, thereby reduce the carrier mobility. It would be extremely useful if the damage can be repaired. In this work, we employ Raman spectroscopy, X-ray photoemission spectroscopy, transmission electron microscopy, and electrical measurements to study defects in graphene introduced by argon plasma bombardment. We have found that majority of these defects can be cured by a simple thermal annealing process. The self-healing is attributed to recombination of mobile carbon adatoms with vacancies. With increasing level of plasma induced damage, the self-healing becomes less effective. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795292]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据