InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5-3 and 3-10 mu m are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e. g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1:8 x 10(9) cm . Hz(1/2)/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs. (C) 2013 AIP Publishing LLC.