期刊
APPLIED PHYSICS LETTERS
卷 103, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4817932
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资金
- National Science Foundation (NSF) under ECCS [0925844]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0925844] Funding Source: National Science Foundation
Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface. (C) 2013 AIP Publishing LLC.
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