期刊
APPLIED PHYSICS LETTERS
卷 103, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4816839
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资金
- Russian Ministry of Science and Education [8082, 11.G34.31.0055, 11.519.11.6020]
- RFBR [11-03-01137a]
- M.V. Lomonosov Moscow State University Program of Development
Quinquethiophene-based monolayer organic field-effect transistors (OFETs) prepared by Langmuir-Blodgett (LB) technique show hole mobilities up to 10(-2) cm(2)/Vs and On/Off ratios up to 10(6). Functional logic LB monolayer devices operating in air have been demonstrated. The performance of LB OFETs is comparable to self-assembled monolayer field-effect transistors (SAMFETs) devices prepared by self-assembly from solution using the same organosilicon oligothiophene despite the LB OFET monolayer is weakly bounded to the dielectric surface. Taking into account that the LB technique is a fast and rather easy process, these findings highlight a high potential of LB technique for ultrathin organic electronics. (C) 2013 AIP Publishing LLC.
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