期刊
APPLIED PHYSICS LETTERS
卷 103, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4821858
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资金
- New Energy and Industrial Technology Development Organization (NEDO)
Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating beta-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode regions for obtaining low-resistance ohmic contacts. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The device with a gate length of 2 mu m showed effective gate modulation of the drain current with an extremely low off-state drain leakage of less than a few pA/mm, leading to a high drain current on/off ratio of over ten orders of magnitude. A three-terminal off-state breakdown voltage of 370V was achieved. Stable transistor operation was sustained at temperatures up to 250 degrees C. (C) 2013 AIP Publishing LLC.
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