期刊
APPLIED PHYSICS LETTERS
卷 103, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4839515
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资金
- Research Grants Council of Hong Kong (GRF) [PolyU500910]
- PolyU Postgraduate Scholarship [RT6F]
Chemical-vapor-deposited single-and bi-layer graphene sheets have been transferred onto n-type GaAs substrates. The rectifying characteristics and photovoltaic behaviors of graphene/GaAs junctions have been systematically investigated. The graphene sheets can be combined with the underlying n-type GaAs substrates to form Schottky junctions. For bilayer graphene, the Schottky junction shows photovoltaic effects with the open-circuit voltage of 0.65 V and the short-circuit current density of 10.03 mA/cm(2), yielding a power conversion efficiency of 1.95%, which are superior to single-layer one. Such performance parameters are comparable to those of other pristine graphene/semiconductor junction-based devices. (C) 2013 AIP Publishing LLC.
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