期刊
APPLIED PHYSICS LETTERS
卷 103, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4826139
关键词
-
资金
- Qatar University [NPRP 09-1211-2-475]
- NSF [CCF 1217382]
- SRC - DARPA Center for Function Accelerated nanoMaterial Engineering (FAME)
- Russian Fund for Basic Research (RFBR)
- Partner University Fund [PUF/CP/PB01]
Polarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor: plasmonic, associated with the transistor nonlinearity, and bolometric, caused by graphene sheet temperature increase due to THz radiation absorption. In the bolometric regime, electron and hole branches demonstrate a very different response to THz radiation, which we link to the asymmetry of the current-voltage characteristics temperature dependence with respect to the Dirac point. Obtained results are important for development of high-efficiency graphene THz detectors. (c) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据