We characterize the electronic properties of crystalline silicon (c-Si)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) junctions by means of contactless carrier lifetime measurements. The measurements demonstrate that this type of heterojunction has an unexpectedly high open-circuit voltage (V-oc) potential exceeding 690 mV, making it relevant for the implementation into high-efficiency c-Si solar cells. Hybrid n-type c-Si solar cells featuring a PEDOT:PSS hole-transport layer on the front reach an energy conversion efficiency of 12.3%. We observe a humidity-related degradation in cell efficiency during storage in air. The degradation is reduced by capping the entire device by an atomic-layer-deposited aluminum oxide film and is completely avoided in a dehumidified environment. (C) 2013 AIP Publishing LLC.
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