期刊
APPLIED PHYSICS LETTERS
卷 102, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4792313
关键词
-
资金
- DOE [DE-FG02-07ER46386, STT]
- NSF [DMR-1206960]
- ACS-PRF (PRF) [51598-ND7]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- National Science Foundation
- National Institute of Health/National Institute of General Medical Sciences under NSF [DMR-0225180]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1206960] Funding Source: National Science Foundation
In2Se3 has potential as a phase-change material for memory applications. Understanding its phase diagram is important to achieve controlled switching between phases. Using x-ray diffraction and a diamond-anvil cell, the pressure-dependent structural properties of In2Se3 powder were studied at room temperature. alpha-In2Se3 transforms into the beta phase at 0.7 GPa, an order of magnitude lower than phase-transition critical pressures in typical semiconductors. The beta phase persists upon decompression to ambient pressure. Raman spectroscopy experiments confirm this result. The bulk moduli are reported and the c/a ratio for the beta phase is shown to have a highly nonlinear dependence on pressure. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792313]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据