相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes
Zonghui Su et al.
APPLIED PHYSICS LETTERS (2012)
Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series
T. Schulz et al.
JOURNAL OF APPLIED PHYSICS (2012)
Thermal conductivity as a metric for the crystalline quality of SrTiO3 epitaxial layers
Dong-Wook Oh et al.
APPLIED PHYSICS LETTERS (2011)
Effects of point defects on thermal and thermoelectric properties of InN
A. X. Levander et al.
APPLIED PHYSICS LETTERS (2011)
High temperature thermoelectric properties of optimized InGaN
Alexander Sztein et al.
JOURNAL OF APPLIED PHYSICS (2011)
Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications
Elisa N. Hurwitz et al.
JOURNAL OF ELECTRONIC MATERIALS (2011)
Evolution of phase separation in In-rich InGaN alloys
B. N. Pantha et al.
APPLIED PHYSICS LETTERS (2010)
A nondamaging electron microscopy approach to map In distribution in InGaN light-emitting diodes
V. B. Oezdoel et al.
JOURNAL OF APPLIED PHYSICS (2010)
Microstructures produced during the epitaxial growth of InGaN alloys
G. B. Stringfellow
JOURNAL OF CRYSTAL GROWTH (2010)
Heat-Transport Mechanisms in Superlattices
Yee Kan Koh et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors
Yee Kan Koh et al.
JOURNAL OF APPLIED PHYSICS (2009)
When group-III nitrides go infrared: New properties and perspectives
Junqiao Wu
JOURNAL OF APPLIED PHYSICS (2009)
Nanoparticle-in-Alloy Approach to Efficient Thermoelectrics: Silicides in SiGe
N. Mingo et al.
NANO LETTERS (2009)
Single phase InxGa1-xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition
B. N. Pantha et al.
APPLIED PHYSICS LETTERS (2008)
Thermoelectric properties of InxGa1-xN alloys
B. N. Pantha et al.
APPLIED PHYSICS LETTERS (2008)
Two-tint pump-probe measurements using a femtosecond laser oscillator and sharp-edged optical filters
Kwangu Kang et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2008)
Research challenges to ultra-efficient inorganic solid-state lighting
Julia M. Phillips et al.
LASER & PHOTONICS REVIEWS (2007)
Frequency dependence of the thermal conductivity of semiconductor alloys
Yee Kan Koh et al.
PHYSICAL REVIEW B (2007)
Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure:: Assessment of possible indium clustering
Mark J. Galtrey et al.
APPLIED PHYSICS LETTERS (2007)
Thermal conductivity of epitaxial layers of dilute SiGe alloys
DG Cahill et al.
PHYSICAL REVIEW B (2005)
Compositional modulation in InxGa1-xN: TEM and X-ray studies
Z Liliental-Weber et al.
JOURNAL OF ELECTRON MICROSCOPY (2005)
Analysis of heat flow in layered structures for time-domain thermoreflectance
DG Cahill
REVIEW OF SCIENTIFIC INSTRUMENTS (2004)
Electron-beam-induced strain within InGaN quantum wells: False indium cluster detection in the transmission electron microscope
TM Smeeton et al.
APPLIED PHYSICS LETTERS (2003)
High temperature enthalpy and heat capacity of GaN
J Leitner et al.
THERMOCHIMICA ACTA (2003)
Some effects of oxygen impurities on AlN and GaN
GA Slack et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Estimation of the isotope effect on the lattice thermal conductivity of group IV and group III-V semiconductors
DT Morelli et al.
PHYSICAL REVIEW B (2002)
Thermal conductivity of GaN films: Effects of impurities and dislocations
J Zou et al.
JOURNAL OF APPLIED PHYSICS (2002)
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
DI Florescu et al.
APPLIED PHYSICS LETTERS (2000)
Ab initio phonon dispersions of wurtzite AlN, GaN, and InN
C Bungaro et al.
PHYSICAL REVIEW B (2000)