Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C-60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C-60 decoration keeps MoS2 FET performance intact due to the very weak interfacial interactions, making C-60 as an ideal capping layer for MoS2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices. (C) 2013 AIP Publishing LLC.