期刊
APPLIED PHYSICS LETTERS
卷 103, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4819728
关键词
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资金
- US DOE SETP program [DE-AC36-08GO28308]
Experimentally identifying the spatial distribution of recombination in a solar cell is challenging, with only semi-quantitative information available from conventional characterization techniques. We develop a formulation of solar cell physics, based upon well-justified analytic approximations, to quantitatively extract information about recombination in different cell regions. We derive the dependence of V-OC on light-intensity, temperature, and strength of recombination in the space-charge, quasi-neutral, and interface regions. Expanding the scope and utility of commonly used characterization techniques, we apply this formulation to evaluate the spatial distribution of recombination in exemplary crystalline silicon heterojunction and polycrystalline Cu(In,Ga)Se-2 solar cells. (C) 2013 AIP Publishing LLC.
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