期刊
APPLIED PHYSICS LETTERS
卷 102, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4808437
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资金
- National Basic Research Program of China (973 Program) [2009CB939901, 2012CB927402]
- National Science Foundation of China [10874161, 10904135]
- Innovation Foundation of USTC for the Postgraduate
Near room-temperature magnetoresistance (MR) effect in ferromagnetic semiconductor La2NiMnO6 has been reported. The magnetic field dependent MR curve exhibits two distinct regions: the low-field MR which shows a rapid increase in an applied field within 200 Oe and the high-field MR which shows a relatively slow increase with the field increasing (more than 200 Oe). Based on the analyses of magnetic and electronic properties, we suggest that the low-field MR comes from the increased electron tunneling probability accompanied by the alignment of ferromagnetic domains under external field and the high-field MR is due to the suppression of scattering from the spin defects arising from the Ni/Mn antisite disorders. (C) 2013 AIP Publishing LLC.
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