相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors
Alfonso Alarcon et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Contact-Induced Negative Differential Resistance in Short-Channel Graphene FETs
Roberto Grassi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures
V. Hung Nguyen et al.
JOURNAL OF APPLIED PHYSICS (2013)
Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors
Zelei Guo et al.
NANO LETTERS (2013)
Electronic and Transport Properties of Unbalanced Sublattice N-Doping in Graphene
Aurelien Lherbier et al.
NANO LETTERS (2013)
A Graphene-Based Hot Electron Transistor
Sam Vaziri et al.
NANO LETTERS (2013)
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
Viet Hung Nguyen et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2013)
CVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography
Min Wang et al.
SCIENTIFIC REPORTS (2013)
Bandgap Opening by Patterning Graphene
Marc Dvorak et al.
SCIENTIFIC REPORTS (2013)
Impact of gate resistance in graphene radio frequency transistors
Damon B. Farmer et al.
APPLIED PHYSICS LETTERS (2012)
Physical-gap-channel graphene field effect transistor with high on/off current ratio for digital logic applications
Jeong Hun Mun et al.
APPLIED PHYSICS LETTERS (2012)
Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors
B. N. Szafranek et al.
NANO LETTERS (2012)
State-of-the-Art Graphene High-Frequency Electronics
Yanqing Wu et al.
NANO LETTERS (2012)
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect
V. Hung Nguyen et al.
NANOTECHNOLOGY (2012)
Site- and alignment-controlled growth of graphene nanoribbons from nickel nanobars
Toshiaki Kato et al.
NATURE NANOTECHNOLOGY (2012)
Graphene antidot lattice waveguides
Jesper Goor Pedersen et al.
PHYSICAL REVIEW B (2012)
Energy gaps in graphene nanomeshes
William Oswald et al.
PHYSICAL REVIEW B (2012)
High-frequency self-aligned graphene transistors with transferred gate stacks
Rui Cheng et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2012)
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
L. Britnell et al.
SCIENCE (2012)
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
Heejun Yang et al.
SCIENCE (2012)
Tunable electronic structures of graphene/boron nitride heterobilayers
Yingcai Fan et al.
APPLIED PHYSICS LETTERS (2011)
In-plane and tunneling pressure sensors based on graphene/hexagonal boron nitride heterostructures
Yang Xu et al.
APPLIED PHYSICS LETTERS (2011)
Graphene microwave transistors on sapphire substrates
E. Pallecchi et al.
APPLIED PHYSICS LETTERS (2011)
A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
P. J. Zomer et al.
APPLIED PHYSICS LETTERS (2011)
Quasiparticle Band Gap Engineering of Graphene and Graphone on Hexagonal Boron Nitride Substrate
Neerav Kharche et al.
NANO LETTERS (2011)
High-frequency, scaled graphene transistors on diamond-like carbon
Yanqing Wu et al.
NATURE (2011)
The origins and limits of metal-graphene junction resistance
Fengnian Xia et al.
NATURE NANOTECHNOLOGY (2011)
Inducing and optimizing magnetism in graphene nanomeshes
Hong-Xin Yang et al.
PHYSICAL REVIEW B (2011)
Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography
Xiaogan Liang et al.
NANO LETTERS (2010)
Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature
Fengnian Xia et al.
NANO LETTERS (2010)
Graphene nanomesh
Jingwei Bai et al.
NATURE NANOTECHNOLOGY (2010)
Graphene transistors
Frank Schwierz
NATURE NANOTECHNOLOGY (2010)
Electron Transport in Disordered Graphene Nanoribbons
Melinda Y. Han et al.
PHYSICAL REVIEW LETTERS (2010)
On the Possibility of Tunable-Gap Bilayer Graphene FET
Gianluca Fiori et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Controllable spin-dependent transport in armchair graphene nanoribbon structures
V. Hung Nguyen et al.
JOURNAL OF APPLIED PHYSICS (2009)
Direct observation of a widely tunable bandgap in bilayer graphene
Yuanbo Zhang et al.
NATURE (2009)
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder
D. Querlioz et al.
APPLIED PHYSICS LETTERS (2008)
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
V. Nam Do et al.
JOURNAL OF APPLIED PHYSICS (2008)
Graphene antidot lattices: Designed defects and spin qubits
Thomas G. Pedersen et al.
PHYSICAL REVIEW LETTERS (2008)
Ultrahigh electron mobility in suspended graphene
K. I. Bolotin et al.
SOLID STATE COMMUNICATIONS (2008)
Substrate-induced band gap in graphene on hexagonal boron nitride:: Ab initio density functional calculations
Gianluca Giovannetti et al.
PHYSICAL REVIEW B (2007)
Chiral tunnelling and the Klein paradox in graphene
M. I. Katsnelson et al.
NATURE PHYSICS (2006)
Electric field effect in atomically thin carbon films
KS Novoselov et al.
SCIENCE (2004)
Tight-binding description of graphene -: art. no. 035412
S Reich et al.
PHYSICAL REVIEW B (2002)