相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Negative spin-exchange splitting in the exciton fine structure of AlN
Martin Feneberg et al.
APPLIED PHYSICS LETTERS (2013)
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
Jinqiao Xie et al.
APPLIED PHYSICS LETTERS (2013)
Anisotropic absorption and emission of bulk (1(1)over-bar00) AlN
Martin Feneberg et al.
PHYSICAL REVIEW B (2013)
Homoepitaxy and Photoluminescence Properties of (0001) AlN
Mitsuru Funato et al.
APPLIED PHYSICS EXPRESS (2012)
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
Benjamin Neuschl et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2012)
Optically pumped UV lasers grown on bulk AlN substrates
T. Wunderer et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 (2012)
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban et al.
APPLIED PHYSICS EXPRESS (2011)
Shallow donor and DX states of Si in AlN
N. T. Son et al.
APPLIED PHYSICS LETTERS (2011)
Hybrid functional study of Si and O donors in wurtzite AlN
Leonardo Silvestri et al.
APPLIED PHYSICS LETTERS (2011)
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
R. Dalmau et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
Luiz Claudio de Carvalho et al.
PHYSICAL REVIEW B (2011)
Advances in group III-nitride-based deep UV light-emitting diode technology
M. Kneissl et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
Ramon Collazo et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 (2011)
Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates
James R. Grandusky et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 (2011)
Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes
Cyril Pernot et al.
APPLIED PHYSICS EXPRESS (2010)
222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
Hideki Hirayama et al.
APPLIED PHYSICS EXPRESS (2010)
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A. Rice et al.
JOURNAL OF APPLIED PHYSICS (2010)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)
Si-doped AlxGa1-xN(0.56≤ x ≤1) layers grown by molecular beam epitaxy with ammonia -: art. no. 132106
B Borisov et al.
APPLIED PHYSICS LETTERS (2005)
Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
M Hermann et al.
APPLIED PHYSICS LETTERS (2005)
Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy -: art. no. 024106
T Ive et al.
APPLIED PHYSICS LETTERS (2005)
Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)
Y Taniyasu et al.
APPLIED PHYSICS LETTERS (2004)
Transport properties of highly conductive n-type Al-rich AlxGa1-xN (x≥0.7)
ML Nakarmi et al.
APPLIED PHYSICS LETTERS (2004)
Properties of bulk AlN grown by thermodecomposition of AlCl3•NH3
JA Freitas et al.
APPLIED PHYSICS LETTERS (2003)
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
JP Zhang et al.
APPLIED PHYSICS LETTERS (2002)
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
A Wysmolek et al.
PHYSICAL REVIEW B (2002)
Donor-related recombination processes in hydride-vapor-phase epitaxial GaN
JA Freitas et al.
PHYSICAL REVIEW B (2002)
Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN (0.42≤x<1)
Y Taniyasu et al.
APPLIED PHYSICS LETTERS (2002)
DX-behavior of Si in AlN
R Zeisel et al.
PHYSICAL REVIEW B (2000)
Microscopic origin of the phenomenological equilibrium doping limit rule'' in n-type III-V semiconductors
SB Zhang et al.
PHYSICAL REVIEW LETTERS (2000)
分享论文
