期刊
APPLIED PHYSICS LETTERS
卷 103, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4821183
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资金
- Defense Advanced Research Projects Agency CMUVT Program under U.S. Army [W911NF-10-02-0102]
We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was analyzed by low temperature photoluminescence spectroscopy on multiple excitation spots. We find a unique correlation of one single emission band, 76.6 meV below the free excitonic emission, with the luminescence of excitons bound to neutral silicon proving the identity as a two-electron transition. The assignment is confirmed by temperature dependent photoluminescence investigations. We find a donor ionization energy of (63.5 +/- 1.5) meV for silicon in AlN. (C) 2013 AIP Publishing LLC.
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