4.6 Article

Quantum-size effects in hafnium-oxide resistive switching

期刊

APPLIED PHYSICS LETTERS
卷 102, 期 18, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4802265

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资金

  1. Spanish Ministry of Science and Technology [TEC2012-32305, FIS2009-12721-C04-03, CSD2007-00041]
  2. EU under the FEDER Program
  3. DURSI of the Generalitat de Catalunya [2009SGR783]
  4. Ministry of Science and Technology of China [2010CB934200, 2011CBA00602, 2009CB925003, 2011CB921804, 2011AA010401, 2011AA010402]
  5. National Natural Science Foundation of China [61221004, 60825403, 61274091, 50972160, 61106119, 61106082]
  6. ICREA ACADEMIA Award

向作者/读者索取更多资源

Discrete changes of conductance of the order of G(0) = 2e(2)/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single-to few-atom diameters behave as QWs and are capable of carrying current with G(0) conductance. (C) 2013 AIP Publishing LLC.

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