期刊
APPLIED PHYSICS LETTERS
卷 103, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4826457
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资金
- Oregon Nanoscience and Microtechnologies Institute (ONAMI)
- Office of Naval Research [200CAR262]
- Department of Energy's Office of Biological and Environmental Research
The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on the exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies. (C) 2013 AIP Publishing LLC.
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