期刊
APPLIED PHYSICS LETTERS
卷 102, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4811735
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资金
- National Basic Research Program (973 program) of China [2012CB619302]
- National High Technology Research and Development Program (863 program) of China [2011AA03105]
Hole transport control and carrier injection improvement have been demonstrated in the InGaN/GaN light-emitting diodes (LEDs) with step-stage multiple-quantum-well (MQW) structure and Si-doped hole-blocking barriers. Single-wavelength emission was obtained under electrical pumping in these LEDs by utilizing hole-blocking effect. The light emission around 450 nm showed a substantial increase compared with the reference sample with single or step-stage indium-content MQWs. The droop behavior and wavelength stability were also improved significantly. These improvements were attributed to the enhanced carrier injection to the active region due to the alleviation of the quantum-confined Stark effect and the effective hole-blocking effect of the Si-doped barriers. (C) 2013 AIP Publishing LLC.
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