Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790844]