期刊
APPLIED PHYSICS LETTERS
卷 103, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4817296
关键词
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资金
- National Science Centre [2011/03/B/ST3/02633]
- European Regional Development Fund through the grant Innovative Economy [POIG.01.01.02-00-008/08]
- FP7-PEOPLE-IAPP-2008 [SINOPLE 230765]
Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 +/- 60.05 and 0.60 +/- 60.05 eV below the conduction band for N- and Ga-face GaN surface, respectively. (C) 2013 AIP Publishing LLC.
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