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Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures
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Deep levels associated with dislocation annihilation by Al pre-seeding and silicon delta doping in GaN grown on Si(111) substrates
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Ultrafast hot electron relaxation time anomaly in InN epitaxial films
Tsong-Ru Tsai et al.
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Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy
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Ultrafast recombination in Si-doped InN
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Recombination mechanism of photoluminescence in InN epilayers
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Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
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Temperature dependence of nonradiative recombination in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates
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