相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Characterization of InGaN-based nanorod light emitting diodes with different indium compositions
J. Bai et al.
JOURNAL OF APPLIED PHYSICS (2012)
Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy
S. F. Chichibu et al.
JOURNAL OF APPLIED PHYSICS (2012)
Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods
Bin Jiang et al.
OPTICS EXPRESS (2012)
Visible-Color-Tunable Light-Emitting Diodes
Young Joon Hong et al.
ADVANCED MATERIALS (2011)
Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
Lee Baird et al.
APPLIED PHYSICS LETTERS (2011)
Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods
Q. Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2011)
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
Vytautas Liuolia et al.
JOURNAL OF APPLIED PHYSICS (2010)
Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching
Y. Kawakami et al.
JOURNAL OF APPLIED PHYSICS (2010)
Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots
Yu-An Liao et al.
APPLIED PHYSICS LETTERS (2009)
Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
Yuh-Renn Wu et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2009)
Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
T. S. Ko et al.
JOURNAL OF APPLIED PHYSICS (2008)
Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns
Y. Kawakami et al.
APPLIED PHYSICS LETTERS (2006)
Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN
K Okamoto et al.
APPLIED PHYSICS LETTERS (2005)
Surface-plasmon-enhanced light emitters based on InGaN quantum wells
K Okamoto et al.
NATURE MATERIALS (2004)
Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate
SF Chichibu et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
P Waltereit et al.
NATURE (2000)
分享论文
