2 μm laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate

We report a type-I GaSb-based laterally coupled distributed-feedback (DFB) laser grown on a GaAs substrate operating continuous wave at room temperature. The laser structure was designed to operate near a wavelength of 2 mu m and was grown metamorphically with solid-source molecular beam epitaxy. The device was fabricated using a 6th-order deep etch grating structure as part of the sidewalls of the narrow ridge waveguide. The DFB laser emits total output power of up to 40 mW in a single longitudinal mode operation at a heat-sink temperature of 20 degrees C. (C) 2013 AIP Publishing LLC.