期刊
APPLIED PHYSICS LETTERS
卷 102, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4790357
关键词
-
资金
- Samsung Mobile Displays Research Center Program
- Industrial Core Technology Development Programs of the Korea Ministry of Knowledge Economy [10033573]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10033574, 10033573] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ti contact properties and their electrical contribution to an amorphous InGaZnO (a-IGZO) semiconductor-based thin film transistor (TFT) were investigated in terms of chemical, structural, and electrical considerations. TFT device parameters were quantitatively studied by a transmission line method. By comparing various a-IGZO TFT parameters with those of different Ag and Ti source/drain electrodes, Ti S/D contact with an a-IGZO channel was found to lead to a negative shift in V-T (-Delta 0.52 V). This resulted in higher saturation mobility (8.48 cm(2)/Vs) of a-IGZO TFTs due to effective interfacial reaction between Ti and an a-IGZO semiconducting layer. Based on transmission electron microcopy, x-ray photoelectron depth profile analyses, and numerical calculation of TFT parameters, we suggest a possible Ti contact mechanism on semiconducting a-IGZO channel layers for TFTs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790357]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据