期刊
APPLIED PHYSICS LETTERS
卷 103, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4816133
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资金
- Special Coordination Programs for Promoting Science and Technology
- FIRST Program of JSPS
- JSPS
- Grants-in-Aid for Scientific Research [13J08851, 23000010] Funding Source: KAKEN
We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from similar to 0.01 to 3.2%. The Fermi level of Ga1-xMnxAs exists in the band gap in the whole x region. The Fermi level is closest to the valence band (VB) at x = 1.0% corresponding to the onset of ferromagnetism near the metal-insulator transition (MIT), but it moves away from the VB as x increases or decreases from 1.0%. This anomalous behavior of the Fermi level indicates that the ferromagnetism and MIT emerge in the Mn-derived impurity band. (C) 2013 AIP Publishing LLC.
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