期刊
JOURNAL OF MATERIALS RESEARCH
卷 19, 期 10, 页码 3099-3108出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/JMR.2004.0403
关键词
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Unloading rate and maximum load have been previously shown to affect the response of silicon to sharp indentation, but no such study exists for spherical indentation. In this work, a statistical analysis of over 1900 indentations made with a 13.5-mum radius spherical indenter on a single-crystal silicon wafer over a range of loads (25-700 mN) and loading/unloading rates (1-30 mN/s) is presented. The location of pop-in and Pop-out events, most likely due to pressure-induced phase transformations, is noted, as well as pressures at which they occur. Multiple occurrences of pop-in and pop-out events are reported. Raman micro-spectroscopy shows a higher intensity of metastable silicon phases at some depth under the surface of the residual impression, where the highest shear stresses are present. A stability range for Si-II is demonstrated and compared with previous results for Berkovich indentation.
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