期刊
APPLIED PHYSICS LETTERS
卷 103, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4824614
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资金
- National Science Foundation [DMR 07-04354, DMR 10-05720]
- U.S. Department of Energy [DEFG02-96-ER45439]
- Dow Chemical Company
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1306822] Funding Source: National Science Foundation
The present work employs a combination of isotopic self-diffusion measurements and diffusion-drift modeling to identify a unique mechanism for defect accumulation in surface space-charge layers of TiO2. During oxygen gas-exchange experiments at elevated temperatures, rutile ( 110) surfaces inject charged oxygen interstitials into the underlying bulk. Yet near-surface electric fields attract the injected defects back toward the surface, retarding their diffusional migration and leading to longer residence times within the space-charge layers. The extended residence time enhances kick-in reactions, resulting in measureable pile-up of the isotope. Related effects probably generalize to other related semiconductors. (C) 2013 AIP Publishing LLC.
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