E2 phase transition:: Thin-film breakdown and Schottky-barrier suppression -: art. no. 155332

We discuss the electrostatic energy driven type of phase transitions in thin films. They occur under external or built-in electric fields. In the course of transition, the electrostatic energy (proportional toE(2)) discharges into structural defects. This may lead to dielectric-film breakdown or Schottky-barrier suppression in semiconductor film junctions. The E-2 transitions exhibit the first-order phase transition kinetics, including both the nucleation and spinodal decomposition scenarios.