期刊
APPLIED PHYSICS LETTERS
卷 103, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4823818
关键词
-
资金
- National Science Council of Taiwan [NSC 101-2221-E-009-077-MY3]
Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of as high as 10(3) and endurance of 3000 cycles as compared to conventional pure copper and unoxidized Cu-Ti alloy electrodes. It was conjectured that the Cu-Ti alloy electrodes could obtain the appropriate amount of copper atoms to format and rupture the conductive filaments in the resistive switching layer. Furthermore, the oxidized Cu-Ti alloys could control the Cu cations from the Cu and Cu2O to the appropriate amountto achieve the most favorable PMC characteristics. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据