期刊
APPLIED PHYSICS LETTERS
卷 103, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4818261
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资金
- National Science Foundation (NSF) [1102356]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1102356] Funding Source: National Science Foundation
Comprehensive Monte Carlo simulation of dark and illuminated IV characteristics of polymer bulk heterojunction solar cells has long been blocked by lack of incorporation of physical processes involved in formation of dark current and charge injection models at the electrodes. This paper introduces quasi-neutral electron and hole transport layers for decoupling contact properties from hopping charge transport in the bulk of donor/acceptor blend. This approach led to comprehensive independent simulation of dark and illuminated IV characteristics which better agree with experimental results. Recombination at the donor/acceptor interface was proved to be the origin of dark IV and the limiting factor of open circuit voltage. (C) 2013 AIP Publishing LLC.
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