期刊
APPLIED PHYSICS LETTERS
卷 103, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4819029
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资金
- National Science Foundation (NSF)
- Department of Energy (DOE) under NSF CA [EEC-1041895]
- NSF Materials World Network [DMR-1108450]
- ARCS Foundation
- Steve W. Chaddick Chair in Electro-Optics
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1108450] Funding Source: National Science Foundation
Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation at 5 kV. The intensity of the 3.37 eV peak correlates monotonically with the resistivity of the films. By annealing the films in N-2 and N-2/H-2 atmospheres, the 3.37 and 3.416 eV transitions are shown to be related to hydrogen. (C) 2013 AIP Publishing LLC.
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