期刊
APPLIED PHYSICS LETTERS
卷 102, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4798326
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资金
- Multidisciplinary Institute of Digitalisation and Energy (MIDE)
- Aalto Energy Efficiency Research Programme (AEF)
- Academy of Finland
We present a first-principle method for quantitative modeling of optical energy flow and dissipation in thin-film (TF) light-emitting diodes (LEDs) based on highly general Green's function method. Unlike conventional models, the presented model simultaneously accounts for interference, near-field effects, and internal absorption in determining the radiance generated by a LED. We show that these effects have a profound influence on the efficiency of LEDs and strongly affect the light extraction efficiency (LEE) and the internal quantum efficiency. According to our results, the LEE of an InGaN-GaN TF-LED with untextured surfaces and typical active region (AR) thickness on the order of 10 nm is 67% while a LED with a thin AR exhibits only a LEE of 29%. Based on the numerical results, we discuss the factors that affect the overall efficiency and design considerations to optimize the structure of thin-film LEDs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798326]
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