☆ 4.6 Article

Tilted epitaxy on (211)-oriented substrates

APPLIED PHYSICS LETTERS (2013)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Physics, Applied

Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy

S. Y. Woo et al.

JOURNAL OF APPLIED PHYSICS (2012)

添加到收藏夹

Article Physics, Applied

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

S. Hosseini Vajargah et al.

JOURNAL OF APPLIED PHYSICS (2012)

添加到收藏夹

Article Physics, Applied

The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

G. A. Devenyi et al.

JOURNAL OF APPLIED PHYSICS (2011)

添加到收藏夹

Article Engineering, Electrical & Electronic

Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates

X. J. Wang et al.

JOURNAL OF ELECTRONIC MATERIALS (2011)

添加到收藏夹

Article Engineering, Electrical & Electronic

Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy

F. Zhao et al.

JOURNAL OF ELECTRONIC MATERIALS (2011)

添加到收藏夹

Article Engineering, Electrical & Electronic

Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates

Kwang-Chon Kim et al.

JOURNAL OF ELECTRONIC MATERIALS (2010)

添加到收藏夹

Article Crystallography

Heteroepitaxy of CdTe on tilting Si(211) substrates by molecular beam epitaxy

YZ Wang et al.

JOURNAL OF CRYSTAL GROWTH (2006)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.